摘要
本文通过对共振隧穿电流密度随外加偏压及应力而变的依赖关系的理论研究,模拟了Zn_(1-x)Cd_xSe/ZnS共振隧穿电流密度随外加偏压及应力的变化曲线。给出了等效电阻系数随外加偏压及应力而变的依赖关系,得出了介观压阻系数与外应力的变化符合线性关系的结论。这些结论为将机械信号转换为电学信号的介观效应器件的设计提供了理论指导。
The dependence of resonant tunneling current density on the applied bias voltage and strain is studied in theory. The curves of the resonant tunneling current density in Zn1-xCdxSe/ZnS varied with the applied bias voltage and strain are simulated. The dependence of the equivalent resistance coefficient on the applied bias voltage and strain is given. A conclusion that the variation of the mesopiezo-resistance coefficient with the strain agree with a linear relationship is obtained. This conclusion is of theoretical significance to the design of the meso-effect devices which convert mechanical signals into electric signals.
出处
《红外》
CAS
2009年第3期35-38,共4页
Infrared
基金
山西省自然科学基金资助(200611010
2-006-2008)
关键词
介观压阻系数
应力
共振隧穿电流
偏压
meso-piezo-resistance coefficient
strain
resonant tunneling current
bias voltage
