宽束冷阴极离子源分时中和技术的研究

Ion beam neutralization of broad beam cold cathode ion source

离子束辅助镀膜沉积过程中,绝缘薄膜表面的电荷积累效应严重影响了薄膜质量。通过对宽束冷阴极离子源引出栅部分的改进,采用分时引出电子和离子方法,使正负电荷中和,以消除薄膜表面的放电现象,并对引出电子束的束流密度、能量、发射角等参数进行了测试。实验结果表明:在引出电压为600 V时,电子的平均能量为100 eV左右;引出电子束的发射角可以达到±40°,在±15°范围内的束流密度波动小于±5%。引出电子的束流密度较同参数下的离子束流密度小,通过调节脉冲电源的占空比,可达到很好的中和效果。

Charge accumulation effect on the surface of the insulation film degrades the quality of the films in the process of IBAD. A square wave AC voltage power is connected to the extraction grid of the broad beam cold cathode ion source. Therefore, the positive and negative charges are neutralized to eliminate the discharge phenomenon on the surface of the film by extracting the electrons and ions out. The parameters, such as the initial energy, densities and radiation angle of the electron beam were tested in the experiment. The experiment results show that the average electronic energy is about 100 eV and the emission angle of the extracted electron beam reaches ±40° when the extraction voltage is 600 V. With the same parameters, the beam flux of the extracted electron beam is less then the ion beam. A good neutralization effect can be obtained by adjusting the duty cycle of the pulse power.