带过流自保护功能高压大功率 VDMOSFET 的研究

Research on High Voltage Power VDMOSFET with Over Current Selfprotection Function

研制出一种高可靠性、具有过流自保护功能的高压大功率ＶＤＭＯＳＦＥＴ器件，它采用与常规ＶＤＭＯＳＦＥＴ工艺相同、结构不同的设计。该器件的漏－源击穿电压大于２００Ｖ，正常工作电流大于２Ａ，过流自保护小于４Ａ，它能大大提高应用的可靠性。

A high reliability high voltage power VDMOSFET with over current selfprotection is described in the paper.The device with the breakdown voltage of drainsource more than 200V,the normal operating current more than 2A,the overcurrent for selfprotection less than 4A has been fabricated.It uses the same processing but different structure as general VDMOSFET.The application reliability of the devices is improved by using the new VDMOSFET.