摘要
在450℃反应温度下，利用无水三氯化铝与叠氮化钠在25mL的不锈钢反应釜中直接反应，成功地在硅片衬底上制备了六方单晶氮化铝（h—AlN）纳米线有序阵列。这些纳米线呈长直线状，粗细均匀，直径约为100nm，长度均在几个微米以上。所有纳米线生长方向一致，而且与硅片衬底垂直。经过分析，纳米线由气液固机制生长而成.
Hexagonal aluminum nitride （h-AlN） uanowire arrays have been successfully synthesized on the silicon wafer substrate by directly reacting AkCl3 with NaN3 in stainless steel autoclave of 25ml capacity at the low temperature of 450℃ for 24 hours. The nanowires have long straight-wire morphology with a diameter some 100 nm and a length up to several micrometers. The growth direction of all nanowires is same and it is vertical to the substrate surface. After analysis, the growth mechanism for h-AlN nanowires is possibly VLS mechanism.
出处
《纳米科技》
2009年第1期23-25,71,共4页
基金
陕西省教育厅科学研究计划项目（06JK2141,西安理工大学科研基金）108-210702）
