期刊文献+

溶胶-凝胶法制备WO_3-SiO_2材料的氨敏特性研究 被引量:27

Study on NH3 Sensing Properties of WO3SiO2 Materials Prepared by Solgel Method
下载PDF
导出
摘要 采用溶胶-凝胶法制备了WO3+xwt%SiO2(x=0,5,10,20)粉体材料。对其结构、形貌进行了XRD、AFM、XPS和比表面积测量、分析,结果表明:获得了单斜晶系结构的WO3多晶材料;晶粒尺寸随SiO2含量的增加而减小。测量了材料的NH3气敏特性,得到敏感元件的电阻和灵敏度随SiO2含量的增加而增加;溶胶-凝胶法制备的WO3+5wt%SiO2粉料用于NH3测量具有优良的特性,在350℃及以上应用优于纯WO3材料。 Gas sensing materials of WO3+xwt%SiO2 (x=0,5,10,20) were prepared by means of solgel method. The microstructure was characterized through XRD, AFM, XPS and surface area analyzer. It was observed that the nanosized monoclinic phase of WO3 was formed and the grain size decreased with increasing amount of SiO2. The materials' NH3 sensing properties were measured in the conventional flow apparatus. Being superior to pure WO3 element the WO3+5wt%SiO2 sensing element gave fairly good response to NH3 above 350℃.
出处 《功能材料》 EI CAS CSCD 北大核心 1998年第3期276-280,共5页 Journal of Functional Materials
关键词 半导体 气敏材料 溶胶-凝胶法 三氧化钨 二氧化硅 semiconductor, gas sensing material, solgel method, WO3, SiO2
  • 相关文献

参考文献6

  • 1董远达,丁星兆.溶胶-凝胶工艺和氧化物气敏材料[J].功能材料,1992,23(1):18-22. 被引量:15
  • 2Cantalini C,Sens Actuators B,1996年,31卷,81页
  • 3姚熹,Sens Actuators B,1995年,24/25卷,347页
  • 4Tamaki J,J Electrochem Soc,1994年,141卷,2207页
  • 5Xu C,Semsprs Actia B,1991年,3期,147页
  • 6王旭生,Sens Actuators B

二级参考文献10

  • 1徐甲强,沈渝生.TiO_2掺杂α-Fe_2O_3薄膜的制备与气敏性能[J].传感器技术,1990(6):26-30. 被引量:7
  • 2彭军,朱兆宗,张鹤呜,来新泉,王彦新,杨刚亮.烧结感应体的气敏特性[J]传感器技术,1988(02).
  • 3T. Suzuki,T. Yamazaki. Effect of annealing on the gas sensitivity of tin oxide ultrathin films[J] 1990,Journal of Materials Science Letters(7):750~751
  • 4Kenkichiro Kobayashi,Genji Okada,Masumi Shimizu,Shoichi Okamoto. An oxygen sensitive ZnO-SiO2-Au device using photodesorption of oxygen[J] 1990,Journal of Materials Science(6):2958~2962
  • 5A. Tsuzuki,H. Murakami,K. Kani,S. Kawakami,Y. Torii. Preparation of Nb-doped TiO2 films by the sol-gel method[J] 1990,Journal of Materials Science Letters(6):624~626
  • 6Y. Sadaoka,T. A. Jones,W. G?pel,S. Kimura,N. Honda. Effect of NO2 in air on the electrical conductance of In2O3 films with and without added ZnO prepared by R.F. Sputtering[J] 1990,Journal of Materials Science(5):2632~2636
  • 7Chunying Yu,Yasuhiro Shimizu,Hiromichi Arai,Shishan Sheng. Behaviour of adsorbed oxygen on Mg-doped SrTiO3 used as a semiconductive oxygen sensor[J] 1989,Journal of Materials Science Letters(7):765~767
  • 8Takeyuki Suzuki,Tsutomu Yamazaki,Kazuyuki Takahashi,Tadashi Yokoi. Effect of platinum distribution on the hydrogen gas sensor properties in tin oxide thin films[J] 1989,Journal of Materials Science(6):2127~2131
  • 9穆宝贵,黎丽琳.表面覆膜SnO_2半导体氢敏元件[J].传感器技术,1991(1):31-34. 被引量:3
  • 10程英芳,任玉芳.复合氧化物C_2H_5OH敏感材料的研究[J].传感器技术,1991(1):28-30. 被引量:3

共引文献14

同被引文献362

引证文献27

二级引证文献144

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部