介孔复合半导体NiO-TiO_2的制备与光响应性能

Preparation and Photo Absorption Property of Coupled Semiconductor NiO-TiO_2

采用模板剂法制备了系列NiO-TiO2复合半导体,用N2吸附-脱附、XRD、TPR、TEM和UV-Vis DRS等方法对半导体材料的孔结构、表面构造、能带结构与其吸光特性进行了分析.结果表明:所制备的NiO-TiO2为介孔结构的纳米管或带,其比表面积超过100m2/g;NiO在TiO2表面分散均匀,并部分形成NiTiO3固熔体;NiO与TiO2间存在明显的复合效应,当NiO含量由2%增加至10%时,其Eg值由3.82eV降至3.49eV,有效地拓展了光响应范围.

NiO-TiO2 coupled semiconductors were synthesized by organic templates method. Their pore distribution, crystal structure, surface composition and photo absorption properties were investigated by techniques of N2 adsorption-desorption, XRD, TPR, TEM and UV-Vis DRS. The results show that the NiO-TiO2 coupled semiconductors prepared by organic templates exist in nanotube or nanobelt with mesporous structure, and the BET surface area is higher than 100m^2/g. The NiO particles disperse well on the surface of TiO2, and the strong interaction between NiO and TiO2 results in the formation of NiTiO3. The p-n couple effect of NiO and TiO2 extends distinctly the photo absorption field and decreases the E from 3.82eV to 3.49eV when the addition amout of NiO is increased from 2% to 10%.