Ultraslow Optical Solitons in a Coupled Double Quantum-Well Nanostructure

We demonstrate the formation of ultraslow dark semiconductor double quantum well （SDQW） structure based optical solitons with a four-level scheme in an asymmetric on intersubband transitions by using only a low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with a ultraslow group velocity Vg/c - -10^-3. Such a semiconductor system is much more practical than its atomic counterpart because of its flexible design and the controllable interference strength. This nonlinear optical process in the SDQW solid-state material may be used for the control technology of optical delay lines and optical buffers.