一个8GHz基于AlGaN/GaN HEMT的内匹配电路

8 GHz High Efficiency Internally Matched AlGaN/GaN HEMT Power Amplifier

论述了一个在8 GHz下基于AlGaN/GaN HEMT功率放大器HMIC的设计、制备与测试。该电路包含了1个10×100μm的AlGaN/GaN HEMT和输入输出匹配电路。在偏置条件为VDS=40 V、IDS=0.16 A时输出连续波饱和功率在8GHz达到36.5 dBm(4.5 W),PAE为60%,线性增益10 dB;在偏置条件为VDS=30 V、IDS=0.19 A时输出连续波饱和功率在8 GHz达到35.6 dBm(3.6 W),PAE为47%,线性增益9 dB。

The design and fabrication and test of an 8 GHz internally matched AlGaN/GaN HEMT Power Amplifier had been reported.The circuit is consisted of a 10×100 μm AlGaN/GaN HEMT and input and output matching networks.The developed internally matched power amplifier module has exhibited 4.5 W power output with 10 dB associated gain and 60% PAE at 8 GHz.