摘要
采用共沉淀法制备了掺杂Au的ITO(Sn/In=0.6)介孔材料来制备H2敏感器,分析结果表明,制得的ITO(纯和掺杂样品)是菱形晶相,其中掺杂5 mol%Au的样品有较窄的孔分布,其孔径为7~8 nm,用其制作的元件在150 mA工作电流下对H2(10-3)的灵敏度达到40.6,且对CO,NH3选择性较高。响应时间和恢复时间均小于1 min。
The mesoporous ITO(Sn/In=0.6) doped with Au was prepared through co-precipitation It can be used to make H2 sensor.The ITO(pure and doped) was rhombohedron crystal phase,and the ITO doped with 5 mol%Au had narrow pore distribution,its apertures were about 7-8 nm,and the sensitivity to H2(10-3) reached to 40.6 under 150 mA.and selectivity to CO and NH3 was good.The response and resume time were less than one minute.
出处
《电子器件》
CAS
2009年第1期38-40,共3页
Chinese Journal of Electron Devices
基金
福建省教育厅项目资助(JA07015)
福建省科技厅项目资助(2006F5058
2005HZ01-2-6)
关键词
气敏性
ITO
掺杂
共沉淀法
gas sensitivity
ITO
doped
co-precipitation