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一款适用于WCDMA标准的大动态范围SiGe HBT可变增益放大器设计 被引量:1

High Dynamic Range SiGe HBT Variable Gain Amplifier for WCDMA Applications
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摘要 第三代移动通信标准WCDMA要求放大器增益可调,并且增益动态范围较大。根据这一要求给出了一种基于SiGeHBT具有高动态范围的可变增益放大器(VGA)设计。放大器为三级级联结构,第一级为输入缓冲级,第二级为增益控制级,最后为放大级。VGA的增益控制通过调整第二级的偏置实现。VGA在1.95 GHz频率下,在0~2.7 V增益控制电压变化下,具有44 dB增益变化范围,最大增益49 dB。在最大增益处最小噪声系数为2.584 dB,输入输出电压驻波比低于2,性能良好。 A high dynamic range linear-in-dB variable gain amplifier(VGA) using SiGe HBT devices for WCDMA applications is presented.The gain is achieved through three stages amplifiers.The first and the third stage is the normal amplify stage,and the second stage is the gain control stage.The gain control is implemented by adjusting the bias of the second amplifier.The VGA is driven by a 2.7 V power supply,and has a 44 dB linear gain control range varying from 4 dB to 49 dB when control voltage varies from 0 to 2.7 V.The maximum gain is 49 dB at the frequency of 1.95 GHz,the noise figure is 2.584 dB at maximum gain,input/output VSWRs keep below 2 and constant.
出处 《电子器件》 CAS 2009年第1期45-48,共4页 Chinese Journal of Electron Devices
基金 国家自然科学基金项目资助(60776051 60376033) 北京市自然科学基金项目资助(4082007) 北京市教委科技发展计划项目资助(KM200710005015) 北京工业大学青年科研基金资助(97002013200701) 北京工业大学研究生科技基金重点资助项目(YKJ-2007-3005) 北京市属市管高校中青年骨干教师培养计划项目资助(102(KB)-00856) 北京市优秀跨世纪人才基金项目资助(67002013200301)
关键词 射频放大器 可变增益 电路设计 WCDMA SIGEHBT ADS RF amplifier variable gain circuit design WCDMA SiGe HBT ADS
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参考文献8

  • 1Meyer Meyer R G,Member Member W D. A DC to 1-GHz Differential Monolithic Variable-Gain Amplifier[J]. IEEE J. Solid- State-Circuits, 1991,26(11 ) : 1673-1680.
  • 2Universal Mobile Telecommunications System(UMTS); UE Radio Transmission and Reception (FDD)[S]. ,"ETSI Technical Specification 125 101, version 6. 2.0,2003.
  • 3恽廷华,唐守龙,时龙兴.一种指数增益控制型高线性CMOS中频可变增益放大器[J].Journal of Semiconductors,2006,27(9):1666-1671. 被引量:5
  • 4Joba Joba H, Takahashi Takahashi Y, Matsunami Matsunami Y, et al. "W-CDMA SiGe TX-IC with High Dynamic Range and High Power Control Accuracy[C]//IEEE Radio Frequency Integrated Circuits Symposium 2002.
  • 5陈邦嫒.射频通信电路[M].北京:科学出版社,2006.502-516.
  • 6Ville Vintola, Mikko Matilainen, et al. Variable Gain Power Amplifier for Mobile WCDMA Application[J]. IEEE Trans. Microwave Theory And Techniques. 2001,49 (10) : 2464-2471.
  • 7Byme Byrne N, Murphy Murphy P J, McCarthy McCarthy K G, et al. A SiGe HBT Variable Gain Amplifier with 80dB Control Range for Applications up to 3 GHz[C]//European Conference on Wireless Technology 2004, Amsterdam. 2004:193- 196.
  • 8Kim Kim C W, Kim Kim Y G. A 2. 7V SiGe HBT Variable Gain Amplifier for CDMA Applications[J]. IEEE Microwave and Wireless Components Letters, 2003,13(12) : 502-504.

二级参考文献9

  • 1Rijns J J F. CMOS low-distortion high-frequency variablegain-amplifier. IEEE J Solid-Stage Circuits, 1996, 31 (7) :1029
  • 2Wu C H, Liu C S, Liu S L. A 2GHz variable-gain amplifier with 50dB linear-in-magnitude controlled gain range for 10GBase-LX4 ethernet. IEEE ISSCC Dig Tech Papers,2004,1:484
  • 3Motamed A, Hwang C K, Ismail M. A low-voltage low-power wide-range CMOS variable gain amplifier. IEEE Trans Circuits Syst Ⅱ , 1998,45:800
  • 4Aggarwal S, Khosrowbeygi A, Daanen A. A single-stage variable-gain amplifier with 70-dB dynamic range for CDMA2000 transmit applications. IEEE J Solid-State Circuits,2003,38:911
  • 5Otaka S, Takemura G, Tanimoto H. A low-voltage low-noise accurate linear-in-dB variable-gain amplifier with 500-MHz bandwidth. IEEE J Solid-State Circuits, 2000,35:1942
  • 6Pozar D. Microwave and rf design of wireless systems. NewYork:Wiley, 2001
  • 7Yun T H, Wu J H, Shi L X. A novel CMOS exponential voltage generator based on differential pair' s transfer characteristic. Proc 3rd IEEE Int Conf on Communication, Circuits and Systems, Hong Kong, China, 2005.. 1091
  • 8Gray P, Hurst P, Lewis S, et al. Analysis and design of analog integrated circuits. New York: Wiley,2001
  • 9Peeters E, Steyaert M, Sansen W. High-frequency measurement procedure for fully differential building blocks. IEEE Trans Instrum Meas, 1997,46:1039

共引文献13

同被引文献10

  • 1K[M C-W, K[M Y-G. A 2. 7-V SiGe variable gain amplifier for CDMA applications [J]. IEEE Microwave Wireless Compon Lett, 2003, 13(12) 502-504.
  • 2XIE H Y, LUZY, ZHANGWR. Adual-bandSiGe HBT low noise amplifier [C] // ICSICT. Shanghai, China. 2010: 668-670.
  • 3CHANGSF, CHEN W L, HSUC H. CMOS dual- band variable-gain amplifier for 3G-WCDMA and WLAN dual-mode RF receivers [J]. Elec Lett, 2007,43(2): I02-I03.
  • 4AMOR M B, DOUSS S, FAKHFAKH A, et al. Dual band CMOS LNA design with current reuse topology [C] S/ IEEE DTIS. Los Angeles, CA, USA. 2006: 57-61.
  • 5陈星弼.晶体光原理与设计[M].北京:电子工业出版社,2009.
  • 6LINYJ, HSUSH, J]NJD, etal. A3.1-10.6 GHz ultra-wideband CMOS LNA with current reuse technique [J]. IEEE Microwave Wireless Compon Lett, 2007, 17(3).- 232-234.
  • 7郭峰,李智群,陈东东,李海松,王志功.宽带CMOS可变增益放大器的设计[J].Journal of Semiconductors,2007,28(12):1967-1971. 被引量:5
  • 8张蔚,张万荣,谢红云,金冬月,何莉剑,王扬,沙永萍.基于SiGe HBT的超宽带低噪声放大器的设计[J].微电子学,2008,38(2):271-274. 被引量:3
  • 9黄毅文,张万荣,谢红云,沈珮,黄璐,胡宁.一种无电感超宽带低噪声放大器的设计[J].微电子学,2009,39(6):807-810. 被引量:2
  • 10谌斐华,多新中,孙晓玮.一种具有新型增益控制技术的CMOS宽带可变增益LNA[J].电子与信息学报,2010,32(11):2772-2775. 被引量:5

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