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RTD/HPT光控单-双稳转换逻辑单元 被引量:1

Light Controlled MOBILE with the RTD/HPT Structure
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摘要 以光接收器件代替RTD MOBILE(RTD单-双稳转换逻辑单元)电路中的HEMT或HBT,可构成光控MOBILE电路。在比较了四种光控MOBILE结构的基础上,选择RTD/HPT光控结构,重点分析讨论了RTD/HPT光控MOBILE的工作原理,当光控MOBILE的输入光功率超过一个临界值时,MOBILE的输出电压便会从高电平跳变到低电平;由HPT光增益理论分析了提高HPT性能的措施以及HPT设计中应该注意的问题;介绍了以Si光三极管代替HPT,通过模拟实验,验证了RTD/HPT光控MOBILE的逻辑功能。 The light controlled monostable-bistable transition logic element (MOBILE) can be formed by using a photodetector to replace the HEMT or HBT in the conventional resonant tunneling device (RTD) MOBILE circuit. Based on the comparison of four different structures of the light controlled MOBILE, the light controlled MOBILE with the RTD/HPT structure is selected. The operation principle of light controlled MOBILE with the RTD/HPT structure is discussed mainly. The output voltage becomes low level from high level suddenly when the input light power increases to a critical value. The methods for improving the performance of the heterojunction phototransistor (HPT) and some notable problems for the design of the HPT are proposed with HPT gain theory. Replacing the HPT with the Si phototransistor, the demonstration of the logic function of the light controlled MOBILE with the RTD/HPT structure is made through simulation experiments.
作者 郭维廉
出处 《微纳电子技术》 CAS 北大核心 2009年第3期141-147,共7页 Micronanoelectronic Technology
关键词 共振隧穿二极管 异质结光晶体管 光控单-双稳转换逻辑单元 逻辑功能验证 resonant tunneling diode (RTD) heterojunction phototransistor (HPT) light controlled monostable-bistable transition logic element (MOBILE) logic function demonstration
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参考文献4

  • 1CHAND N, HOUSTON P A, ROBSON P A. Gain of a heterojunetion bipolar phototransistor [J]. IEEE Transaction on Electron Devices, 1985, 32 (3): 622-627.
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  • 4LIANG H L, GUO W L, NIU P J, et al. The photo-controlled MOBILEs with RTD/HPT Structure [J]. Chinese Journal of Semiconductors, 2004, 25 (2) : 143- 147.

同被引文献4

  • 1AKEYOSHI T, SHIMIZU N, OSAKA J, et al. An optoelectronic logic gate monolithieally integrating resonant tunneling diodes and a uni-traveling-earrier photodiode [J]. Jpn J Appl Phys, 1999, 38: 1223- 1226.
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  • 3SANO K, MURATA K, OTSUJI T, et al. An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode [J]. IEEE J Solid-State Circuits, 2001, 36 (2): 281-289.
  • 4MIYAMOTO Y, YONEYAMA M, HAGIMOTO K, et al. 40 Gbit/s high sensitivity optical receiver with uni-traveling- carrier photodiode acting as decision IC driver [J]. Electronics Letters, 1998, 34 (2): 214-215.

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