摘要
本文给出一种应用于无线传感网(Wireless Sensor Network,WSN)射频前端芯片低压差稳压器(Low Dropout Regulator,LDO)模块,采用SMIC0.18μm MM/RF CMOS工艺的低功耗、高电源抑制比、低温度系数的带隙基准电压源的设计。带隙基准电压源采用输出电压可调结构和高阶温度补偿技术,在Cadence Spectre仿真环境下的仿真结果表明它满足射频前端的系统要求,静态工作电流约为30μA,电源抑制比可达到-72dB,在-40℃至85℃范围内温度系数约为6×10-6/℃。
In this paper, a bandgap reference designed for the Low Dropout Regulator （ LDO ） of WSN RF front-end is proposed. It is designed in SMIC 0.18μm MM/RF CMOS process with low power consumption, high PSRR and small temperature coefficient. The adjustable output voltage structure and high order temperature compensation are adopted in the circuit design. It has been simulated and verified with Cadence Spectre. According to the results of simulation, the bandgap reference fulfills the demand of the RF front-end system. The quiescent current of bandgap is about 30 μA, and PSRR is below -72dB. The temperature coefficient is about 6 ×10^-6℃ in the range from -40℃ to 85℃.
出处
《中国集成电路》
2009年第3期39-43,共5页
China lntegrated Circuit
基金
国家863计划目标导向类项目(2007AA01Z2A7)资助课题
