摘要
As mask features scale to smaller dimensions, the so-called ＂3-D mask effects＂ which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.
As mask features scale to smaller dimensions, the so-called ＂3-D mask effects＂ which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.
基金
Supported by the National Key Basic Research and Development(973) Program of China (No. 2006CB302700)
the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
