脉冲和直流应力下栅氧化膜击穿特性的差别

The Difference of TDDB under Constant Voltage Stress and Pulse Voltage Stress

本文讨论了在直流电压应力和脉冲电压应力作用下栅氧化膜击穿寿命的差别，脉冲应力下栅氧化膜击穿寿命大于直流电压下的击穿。而且频率越高，两者的差别越大。差别起因于脉冲低电平期间栅氧化膜损伤的自行减少。

This paper discusses the difference of TDDB (Time Dependence Dielectric Break down) under constant voltage and pulse voltage stress. It is found that the lifetime of gate oxide under pulsed stress is longer than the lifetime under constant voltage, and the higher the frequency, the longer the lifetime. This phenomenon results from the self - reducing of damage of gate oxide when applied votage is zero.