Al_2O_3/SiN_X 双层绝缘栅 a-Si : H TFT 的研究

Study of Al 2O 3/SiN X Double Layered Gate Insulator a Si∶H TFT

研究Ａｌ２Ｏ３／ＳｉＮＸ双层绝缘栅对ａ－Ｓｉ∶ＨＴＦＴ性能的影响，介绍Ａｌ２Ｏ３／ＳｉＮＸ双层绝缘栅的制作方法．双层绝缘栅结构有效地抑制了单层绝缘栅的针孔效应，改善了短接现象，提高了有效介电常数，从而可减小膜厚，提高栅电容，使得阈值电压降低、开态电流上升，获得了１０７的开关电流比．

The effect on the characteristics of a Si∶H TFT is investigated. The fabrication of Al 2O 3/SiN X double insulate gate film is introduced. The “needle hole effect” of single insulate gate film is successfully suppressed by the structure of double film, and the effective dielectric constant increased, so thickness of insulate film can be reduced and gate capacitance increased. Threshold voltage of 3.3 V and current ratio of I ON / I OFF about 10 7 are obtained.