摘要
论述了ＩＴＯ膜的导电机理及生长机理，讨论了电子束加热真空蒸镀ＩＴＯ膜的方法中，膜的组分、氧分压、衬底温度和蒸发速率等几个参数对ＩＴＯ膜光电性能的影响．在选择合适的工艺条件下制备ＩＴＯ膜，电阻率约４×１０－４Ω·ｃｍ，可见光范围内平均透过率高于９０％．
A comprehensive discussion on the conduction mechanism and growing mechanism of indium tin oxide (ITO) film has been given. The ITO films reported were prepared by electron beam evaporation. The effect of several parameters (such as the ratio of indium to tin, the oxygen partial pressure, the substrate temperature and evaporation rate) on electrical and optical properties has been investigated. In optimized preparation conditions, electrical resistivities of about 4.0×10 -4 Ω·cm were obtained, and the average visible transmittance with values in excess of 90 % were achieved.
出处
《华中理工大学学报》
CSCD
北大核心
1998年第3期10-12,共3页
Journal of Huazhong University of Science and Technology
关键词
ITO
薄膜
氧空位
蒸汽分压
电子束沉积
导电膜
indium tin oxide (ITO) film
electron beam
oxygen vacancies
vapour partial pressure
