射频SOI LDMOS功率放大器设计与仿真

Design and Simulation of RF SOI LDMOS Power Amplifier

简介了改进的绝缘层上硅横向扩散金属氧化物-半导体(SOI LDMOS)电路模型。根据改进的SOI LDMOS电路模型,采用射频仿真软件进行了射频功率放大器的设计与仿真。该射频功率放大器采用两级放大结构,采用了S参数设计方法和负载牵引方法设计。结果表明放大器的增益达到15dB,输出功率达到25dBm,功率附加效率大于40%。

The modified SOl LDMOS circuit model is simply introduced. According to this model, a RF power amplifier （PA） is designed and simulated by using a RF simulator ADS. Two-stage architecture is adopted in the RF PA design. S parameter design method and load-pull design method are used. The simulation result shows that the gain is 15dB, the power output is 25 dBm and the power added efficiency is more than 40%.