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薄膜结构对Si/SiO_2 I-V特性的影响 被引量：1

Effect of microstructure on the I-V properties of Si/SiO_2 film
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摘要 用射频磁控溅射法制备了3种结构的Si/SiO2纳米薄膜,测定了薄膜的I-V特性.实验结果分析表明,薄膜结构是影响其I-V特性的主要因素. Three kinds of Si/SiO2 film are fabricated using the RF magnetron sputtering technique. The I-V properties of nano-size Si/SiO2 films are tested. The results indicate that the nano- structure of the film is the key factor that affects on the I-V properties of Si/SiO2 film.
作者 马自军 马书懿
机构地区 甘肃农业大学理学院 西北师范大学物理与电子工程学院
出处 《物理实验》 北大核心 2009年第3期10-13,共4页 Physics Experimentation
基金 国家自然科学基金资助项目(No.10874140) 甘肃省自然科学基金资助项目(No.0710RJZA105) 教育部科学技术研究资助项目(No.204139) 甘肃农业大学理学院青年教师科研基金资助项目(No.lxy_02)
关键词 射频磁控溅射 Si/SiO2纳米薄膜 I-V特性 RF magnetron sputtering nano-size Si/SiO2 film I-V properties
分类号 O484.42 [理学—固体物理]
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参考文献8

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二级参考文献16

  • 1张开彪,马书懿.Au/(Si/SiO_2)/p-Si结构中电流输运机制的研究[J].电子元件与材料,2005,24(7):56-57. 被引量：3
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  • 10MaSY, ZhangBR, QinGG, et al. R-ray effects on the photoluminescence spectra from nanometer Si embedded Si oxide films [J]. Material Research Bullitin, 1997,32:1 472-1 478.

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物理实验
2009年 第3期

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