SIMOX材料结构、电特性及杂质分析

ANALYSIS OF SIMOX STRUCTURE,ELECTRICAL PROPERTY AND IMPURITY

用扩展电阻（SRP）、二次离子质谱（SIMS）等方法，测量了SIMOX样品的各层结构、电特性和杂质分布．讨论了不同方法的测量，说明了SIMOX材料顶部硅层的扩展缺陷和杂质的施主作用．要制作适合器件需要的SOI材料，必须控制工艺过程中顶部硅层的杂质污染和损伤．

The layer structure, electrical properties and impurities in SIMOX specimens are investigated by means of SRP and SIMS etc.. A brief discussion on the adopted methods is given. The results show that the extended defects and impurities behave as donor in the top silicon layer of the SIMOX specimens. To prepare quality SO1 materials suitable for device fabrication, the processing conditions must be well controlled so as to largely reduce the contamination and damage of the top silicon layer.