摘要
研究了金属硅化物在电阻薄膜材料中的应用．用真空感应熔炼精密浇铸方法制备含铬和镍的硅化物，作为溅射沉积电阻薄膜的溅射阴极靶材．发现随着硅含量的增加，溅射得到的薄膜电阻值变大，Ｓｉ含量在５０％（质量分数）以上时，溅射阴极靶材的组成由ＣｒＳｉ２，ＮｉＳｉ两相变成Ｓｉ，ＣｒＳｉ２和ＮｉＳｉ２三相．所研制的三种型号的溅射阴极靶材适用于不同电阻值范围的电阻薄膜的溅射沉积，可在金属膜和金属氧化膜电阻器上应用．
The fabrication of Ni/Cr silicide and its application in thin film resistor are dealt with. Sputtering targets containing Cr silicide and Ni silicide are produced by vacuum induction melt metallurgical method. With the increase of Si contents, the resistivity of the target increases accompanied with the phase changing from CrSi 2 and NiSi to Si,CrSi 2 and NiSi 2. The targets are used to sputter deposit metal thin film and oxide metal thin film resistors for electronics.
出处
《上海交通大学学报》
EI
CAS
CSCD
北大核心
1998年第2期123-126,共4页
Journal of Shanghai Jiaotong University
基金
国家自然科学基金
关键词
硅化物
靶
溅射
薄膜电阻
silicides
target(electron beam tubes)
sputter
thin film resistor
