一种新型半导体超辐射集成光源

A Novel Semiconductor Integrated Superluminescent Source

为有效地提高超辐射输出功率，满足超辐射发光管应用领域不断扩大的需要，提出了超辐射发光管与半导体光放大器单片集成的思想，并采用ＡｌＧａＡｓ单量子阱、增益导引的氧化物条形结构，对该集成器件进行了初步研制。实验结果表明，这种集成器件可有效地提高超辐射输出功率，有望成为新一代大功率超辐射光源。

In order to increase the superluminescent power effectively, and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated using an AlGaAs SQW heterostructure wafer and gain guid oxide stripe structures. The experimental results show that the integrated superluminescent device can increase the power notably. The device will become a new type superluminescent source.