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高频放电等离子体引发碳化硅表面接枝聚合甲基丙烯酸甲酯 被引量：1

High frequency discharge plasma induced grafting of PMMA onto silicon carbide powder
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摘要 高频放电氮气等离子体表面处理纳米碳化硅粉体,进而在碳化硅表面上引发甲基丙烯酸甲酯单体接枝聚合,在纳米碳化硅表面形成一层保护膜.红外(FTIR),X射线光电子能谱(XPS)以及热失重分析(TGA)测试表明该聚合膜是通过化学键连接在碳化硅表面的,X射线衍射光谱(XRD)表明经等离子体处理改性的碳化硅粉体只是其表面性质发生了改变,其晶体结构并没有发生任何变化. Poly（ methyl methacrylate） （PMMA） grafted onto nano - SiC particles is our experiment, the grafting polymerization reaction is induced by high frequency investigated in this study. discharge N2 plasma treatment of the nanosized powder. FTIR.XPS and TGA results show that PMMA is grafted onto the surfaces of silicon carbide powder, and crystal structure of the silicon carbide powder observed with XRD spectra was unchanged before and after plasma graft polymerization.
作者 韦刚 钟少锋 孟月东 舒兴胜
机构地区 中科院等离子体物理研究所 中科院光电研究院
出处 《材料科学与工艺》 EI CAS CSCD 北大核心 2009年第1期105-109,共5页 Materials Science and Technology
关键词 等离子体 接枝聚合 纳米碳化硅 聚甲基丙烯酸甲酯 plasma graft polymerization SiC nanoparticle PMMA
分类号 O461.24 [理学—电子物理学] O539 [理学—等离子体物理]
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参考文献36

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材料科学与工艺
2009年 第1期

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