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Pyrite Films Grown by Sulfurizing Precursive Iron of Different Crystallizing Status 被引量:1

Pyrite Films Grown by Sulfurizing Precursive Iron of Different Crystallizing Status
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摘要 Precursive iron films with different grain sizes were prepared by magnetron sputtering on substrates heated at different temperatures. The iron films were sulfurized at 673 K for 20 h to form pyrite films. The structural and electrical characters were determined. High substrate temperatures produce large crystallites in the precursive iron films. The pyrite films are composed of a surface layer with coarse columnar grains and a bottom layer with fine equiaxed grains. With the increase of iron grain scale, the carrier concentration decreases and the carrier mobility increases. The electrical resistivity of the pyrite films increases to a maximum in the precursive iron films with increasing the grain size to about 3g nm. Sufficient formation and growth of iron grains result in improved crystallinity and high continuity of the pyrite films. The crystal defect density, transformation stress level and atom diffusion behavior are responsible for the characteristics of the electrical properties dependent on the crystallinity and continuity of the pyrite films or the crystallizing status of the precursive iron films. Precursive iron films with different grain sizes were prepared by magnetron sputtering on substrates heated at different temperatures. The iron films were sulfurized at 673 K for 20 h to form pyrite films. The structural and electrical characters were determined. High substrate temperatures produce large crystallites in the precursive iron films. The pyrite films are composed of a surface layer with coarse columnar grains and a bottom layer with fine equiaxed grains. With the increase of iron grain scale, the carrier concentration decreases and the carrier mobility increases. The electrical resistivity of the pyrite films increases to a maximum in the precursive iron films with increasing the grain size to about 3g nm. Sufficient formation and growth of iron grains result in improved crystallinity and high continuity of the pyrite films. The crystal defect density, transformation stress level and atom diffusion behavior are responsible for the characteristics of the electrical properties dependent on the crystallinity and continuity of the pyrite films or the crystallizing status of the precursive iron films.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2009年第2期237-241,共5页 材料科学技术(英文版)
基金 supported by the National NaturalScience Foundation of China (Grant No. 50871103).
关键词 FeS2 Thin film Crystal structure Electrical property FeS2 Thin film Crystal structure Electrical property
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  • 1A.Ennaoui,S.Fiechter,C.H.Pettenkofer,N.AlonsoVante,K.Büker,M.Bronold,C.H.H(o)pfaer and H.Tributsch:Sol.Energy Mater.Sol.Cells.,1993,29,289.
  • 2P.P.Altermatt,T.Kiesewetter,K.Ellmer and H.Tributsch:Sol.Energy Mater.Sol.Cells,2002,71,181.
  • 3I.J.Fetter and C.R.Sánchez:Solid State Commun.,1992,81,371.
  • 4N.Takahashi,Y.Nakatani,T.Yatomi and T.Nakamura:Chem.Mater.,2003,15,1763.
  • 5N.Takahashi,T.Yatomi and T.Nakamura:Solid State Sci.,2004,6,1269.
  • 6B.Ouertani,J.Ouerfelli,M.Saadoun,B.Bessads,H.Ezzaouia and J.C.Bernede:Mater.Charact.,2005,54,431.
  • 7Y.Z.Dong,Y.F.Zheng,H.Duan,Y.F.Sun and Y.H.Chen:Mater.Lett.,2005,59,2398.
  • 8A.Yamamoto,M.Nakamura,A.Seki and E.L.Li:Sol.Energy Mater.Soi.Cells,2003,75,451.
  • 9L.Reijnen,B.Meester,A.Goossens and J.Schoonman:J.Electrochem.Soc.,2000,147,1803.
  • 10J.R.Ares,A.Pascual,I.J.Fetter and C.R.Sánchez:Thin Solid Films,2005,480/481,477.

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