摘要
在普通掩埋新月型激光器的基础上,提出了一种高频大功率的InGaAsP/InP激光器结构——选择性质子轰击掩埋新月型(SPB-BC),并对激光器结构模型进行了理论分析。采用p-InP衬底,最大输出功率为80mW。500μm腔长激光器,它的调制带宽可以达到6.0GHz。
A high-frequency and high-power InGaAsP/InP laser structure was establishedon the basis of buried crescent lasers by using the proton bombardment technique-theselected proton bombarded the buried crescent laser (SPB-BC). At room temperature, the maximum CW output power of 80 mW and a 3 dB modulation bandwidth of 6 GHz were obtained for a laser with a cavity 500 (am long on a p- type InP substrate.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1998年第5期385-390,共6页
Chinese Journal of Lasers
基金
博士点基金资助项目
关键词
质子轰击
调制带宽
寄生电容
半导体激光器
selective proton bombardment, modulation bandwidth, parasitic capacitance
