摘要
对ＩｎＡｓ沟道ＩｎＡｌＡｓ－ＩｎＡｓ高电子迁移率晶体管材料及器件的设计和器件制作工艺进行了研究，器件样品性能良好，１μｍ栅长ＩｎＡｌＡｓ－ＩｎＡｓＨＥＭＴ器件的最大跨导３００Ｋ时达到２５０ｍＳ／ｍｍ。这是国内首次研制成功的ＩｎＡｓ沟道ＨＥＭＴ器件。
The material and device structure design of InAs channel InAlAs InAs HEMT and its process are studied.The device displays well behaved characteristics,showing a maximum transconductance of 250mS/mm in 300K.This is the first InAs channel HEMT realized in our country.
出处
《半导体情报》
1998年第2期35-37,共3页
Semiconductor Information
