摘要
使用直流磁控反应溅射的工艺方法制备了Ta2O5薄膜MOS型湿敏元件，提出了元件的结构模型，并对其感湿机理进行了讨论．
A Ta2O5 thin film MOS humidity sensitive component was prepared by dc magnetron reactive sputtering. The structure model of this component was presented and the mechanism of humidity sensitivity was discussed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1998年第5期83-85,共3页
Acta Electronica Sinica
关键词
薄膜
MOS
湿敏元件
氧化钽
Ta_2O_5,Thin film, MOS humidity sensitive component
