超高速GaAs微波PIN二极管的研制及其性能分析

Manufacture and Performance Analysis of the Ultrafast GaAs Microwave PIN Diode

论述了超高速ＧａＡｓ微波ＰＩＮ二极管的研制情况。从ＧａＡｓ高阻外延生长着手，采用垂直台面结构，控制Ｉ层浓度为１０１３～１０１４／ｃｍ３，厚度为２．５～１０μｍ。通过闭管Ｚｎ扩散形成Ｐ—Ｎ结，用Ｔｉ－Ａｕ及Ａｕ－Ｇｅ－Ｎｉ作上、下欧姆接触，研制出ＧａＡｓ微波ＰＩＮ二极管。通过测量其正向特性、容压特性、开关特性以及在典型开关电路中的应用，可以看出该器件在开关速度方面的性能尤其优越。

? This article discusses the manufacture and performance of the ultrafast GaAs mic rowav e PIN diode. The diode was made from grown-high resistance-epitaxy and in vertic al mesa construction. The density of I layer was between 1013～1014/ cm 3 and thickness of I layer was between 2.5～10μm. Closed-tube Zn diffusion i s used to form P—N and Ti-Au, Au-Ge-Ni is as up-down ohmic contact. The GaAs microwave PIN diode has good performance in switching time by testing its forwa r d characteristics, capactive-voltage characteristics, switching characteristics and application in typical switching circuit. 【