期刊文献+

射频感性耦合等离子体中的受迫振荡研究 被引量:1

The study of driven oscillation in inductively coupled plasma
下载PDF
导出
摘要 实验研究了匹配状态、放电气压对氩气射频感性耦合等离子体中受迫振荡的影响。结果表明:受迫振荡总是出现在放电的正反馈区;在高气压下(>30Pa)受迫振荡的频率较低。对于使用射频感性耦合等离子体进行薄膜沉积的参数选择给予了理论指导。 A low - frequency oscillation - driven oscillation in ICP by Ar discharging is found near mode transition. The oscillation's region and cause are studied in the experiment, and the influence of pressure is also measured. It is found that driven oscillation occurs in the positive feedback region which is established basing on the influencing of stray capacitor in impedance matching work to the output power of radio - frequency power supply. As the changing of pressure, at high pressure( 〉 30Pa) the frequency of driven oscillation is small. The steady parameters of depositing film in ICP are discussed in theory.
出处 《沈阳航空工业学院学报》 2009年第1期79-84,共6页 Journal of Shenyang Institute of Aeronautical Engineering
关键词 射频感性耦合等离子体 受迫振荡 模式转化 ICP mode transition driven oscillation
  • 相关文献

参考文献15

  • 1N.R. Rueger, M.F. Doemling, M. Schaepkens, et al. Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor [ J ]. Vac. Sci. Technol, 1999, A 17 (5) :2492 -2502.
  • 2F. Heinrich, U. Banziger, A. Jentzseh, et al. Novel high - density plasma tools for large area fiat panel display etching [ J ]. Vac. Sci. Technol, 1996, B 14 (3) :2000 -2004.
  • 3Kim Jung - Hun, lee Ho -Jun, Kim Youn -Taeg, et al. Effects of the axial external magnetic field on the reduction of the dielectric window damage due to capacitive coupling in the inductively coupled plasma [J]. Vac. Sci. Technol, 1997, A 15 (3) :564 - 567.
  • 4S. Lebib, P. Roca i Cabarrocas. Effects of ion energy on the crystal size and hydrogen bonding in plasma - deposited nanocrystalline silicon thin films [J]. Appl. Phys, 2005,97. 104334- 1 -10.
  • 5K. Chandraker. The transition from the first to the second stage of the ring discharge [J]. Phys. D: Appl. Phys, 1978, 11 (13) : 1809 - 1814.
  • 6S. Xu, K. N. Ostrikov, W. Luo, et al. Hysteresis and mode transitions in a low -frequency inductively coupled plasma. [ J]. Vac. Sci. Technol, 2000, A 18 (5) :2185 -2197.
  • 7P. Czuprynski, O. Joubert, L. Vallier, et al. Operating high - density plasma sources in a low - density range: Applications to metal etch processes [J]. Vac. Sci. Technol, 1999, A 17 (5) : 2572 - 2580.
  • 8N. Forgotson, V. Khemka, J. Hopwood. Inductively coupled plasma for polymer etching of 200 mm wafers [ J ]. Vac. Sci. Technol, 1996, B 14 (2) :732 -737.
  • 9G. Cunge, B. Crowley, D. Vender,et al. Turner. Characterization of the E to H transition in a Pulsed inductively coupled plasma discharge with internal coil geometry: bi -stability and hysteresis [J]. Plasma Sources Sci. Technol, 1999, (8) :576 -586.
  • 10S. Xu,K. N. Ostrikov,Y. Li ,et al. Low-frequency, high- density, inductively coupled plasma sources: Operation and application [ J ]. Phys. Plasmas,2001 , 8 (5) :2549 - 2557.

二级参考文献11

  • 1K. Chandraker. The transition from the first to the second stage of the ring discharge[J]. J. Phys. D: Appl. Phys, 1978, 11 (13) : 1809 - 1814.
  • 2U. Kortshagen, N.D. Gibson,J.E. Lawler. On the E-H mode transition in RF inductive discharges [ J]. J. Phys. D: Appl. Phys, 1996, 29:1224-1236.
  • 3Min - Hyong Lee,Chin - Wcok Chung. On the E to H and H to E transition mechanisms in inductively coupled plasma [ J ]. Phys. Plasmas, 2006, 13:063510 - 1 - 10.
  • 4M.M. Turner, M. A. Lieberman. Hysteresis and the E - to - H transition in radiofrequency inductive discharges [ J ]. Plasma Sources Sci. Technol, 1999, 8:313 - 324.
  • 5K. Suzuki, K. Nakamura, H. Ohkubo,H. Sugai. Power transfer efficiency and mode jump in an inductively RF discharge [ J ]. Plasma Sources Sci. Technol, 1998, 7:13 -20.
  • 6I. M. El-Fayoumi, I. R. Jones,M. M. Turner. Hysteresis in the E - to H - mode transition in a planar coil, inductively coupled rfargon discharge[J]. J. Phys. D: Appl. Phys, 1998, 31: 3082 - 3094.
  • 7J. H. Keller, W. B. Pennebaker. Electrical properties of RF sputtering systems[J]. IBM J. Res. Develop, 1979, 23 ( 1 ) :3 - 15.
  • 8Z.F. Ding, W.G. Huo, Y. N. Wang. Novel low -frequency oscillation in a radio - frequency inductively coupled plasma with tuned substrate[ J]. Physics Plasma, 2004, 11 (6) :3270 -3277.
  • 9Sang - Hun Seo, Jung - In Hong, Keun - Hee Bai, and Hong - Young Chang. On the heating mode transition in high - frequency inductively coupled argon discharge [ J ]. Phys. Plasmas,1999, 6 (2) :614 -618.
  • 10Min - Hyong Lee and Chin - Wook Chung. On the E to H and H to E transition mechanisms in inductively coupled plasma [ J ]. Phys. Plasmas, 2006, 13:063510 - 1 - 10.

同被引文献11

  • 1庄钊文等.等离子体隐身技术[M]科学出版社,2005.
  • 2黄培康,殷红成,许小剑.雷达目标特性[M]电子工业出版社,2005.
  • 3袁敬闳,莫怀德.等离子体中的波[M]电子科技大学出版社,1990.
  • 4Alexeff lgor,Kang Weng.Plasma stealth antenna for the U.S.Navy. IEEE International Conference on Plasma Science Proceedings of the 1998 IEEE International Conference on Plasma Science . 1998
  • 5Vidmar R J.Electromagnetic-Wave Propagation in Unmagnetized Plasmas. AD-A250710 . 1992
  • 6J. P. V. Hof,D. D. Stancil.Eigenfrequencies of a Truncated Conical Resonator via the Classical and Wentzel-Kramers-Brillouin Methods. IEEE Transactions on Microwave Theory and Techniques . 2008
  • 7Gregoire D J,,Santoru J,Schumacher R W.Electromagnetic-wave propagation in unmagnetized plasmas. AD-A250710 . 1992
  • 8Hu B J,Wei G,Lai S L.SMManalysis of reflection,ab-sorption and transmission from nonuniform magnetizedplasma slab. IEEE Trans on Plasma Sci . 1999
  • 9李毅,张伟军,莫锦军,袁乃昌.闭式等离子体隐身技术及等离子体参数的优化[J].微波学报,2008,24(1):23-25. 被引量:20
  • 10方弘毅,李光里,杨波.等离子体控制翼型流动分离实验[J].沈阳航空工业学院学报,2010,27(4):18-22. 被引量:3

引证文献1

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部