摘要
本文利用Ｘ射线衍射和ＡＥＳ（俄歇）方法，深入地研究了ＲＦ磁控溅射淀积的Ｐｔ－Ｎｉ／ｐ－ＩｎＰ（１００）非合金膜系在热退火过程中Ｐｔ和Ｎｉ与衬底ＩｎＰ中的Ｉｎ和Ｐ形成稳定化合物的行为。
Abstract Pt Ni/p InP(100) non alloyed thin films deposited by magnetron RF sputtering are thoroughly studied by using XRD and AES. Stable compounds formed by Pt,Ni and In,P on the InP substrate were obtained in the process of annealing. The basic reasons for obtaining the contact resistance as low as 3×10 -6 Ω·cm 2 are revealed.
关键词
半导体器件
欧姆接触
磷化铟
Annealing
Nickel compounds
Platinum metal compounds
