掺杂浓度对中频反应磁控溅射制备Al_2O_3:Ce^(3+)薄膜发光性能的影响

Effect of doped Ce^(3+) concentration on luminescent properties of Al_2O_3:Ce^(3+) films deposited by medium-frequency reaction magnetron sputtering

应用中频反应磁控溅射设备在载玻片上制备掺铈的Al2O3薄膜,在固定的电源功率下,氩气流量为23sccm,氧流量为5sccm,室温下溅射时间为90分钟的条件下,通过控制薄膜中的Ce3+离子的掺杂量来改变薄膜的发光性能。通过X光能量散射谱(EDS)和光致发光测量,得到发光强度和发光峰位对薄膜中的Ce3+浓度有强烈的依赖关系,并且分析了产生这种关系的原因;对发光激发谱分析表明,薄膜发光是源于薄膜中形成的氯化铈集合体中的Ce3+。Al2O3:Ce3+发光膜可应用于需要蓝光发射的平板显示领域。

The Al2O3 films doped with Ce^3＋were deposited on slides by the medium-frequency reaction magnetron sputtering process, to which the power is constant, Ar flowrate 23 sccm, O2 flowrate 5sccm and sputtering time 90min at room temperature. The relationship between the luminescent properties of Al2O3：Ce^3＋ films and the dopod amount of Ce^3＋ in the films was studied. The presence of Ce^3＋ and stoiehiometry of those films were determined by energy dispersive x-ray spectroscopy （EDS）. It was observed that the total luminescence intensity increases and the peak positions are strongly dependent on Ce^3＋ concentration in the films. And the reason of the dependence was analyzed. The analysis of luminescent excitation spectra showed that the luminance of the films is due to the Ce^3＋ concentration in the cerium chloride aggregate formed in the films. The luminescent Al2O3：Ce^3＋ fihns are available to apply to the panel display which needs blue light emission.