氧分压对PLD法生长Si(111)基ZnO薄膜性能的影响

Effects of oxygen partial pressure on the properties of ZnO thin films grown on silicon (111) substrate by pulsed laser deposition

在不同氧分压下用脉冲激光沉积(PLD)法在n型硅(111)衬底上生长ZnO薄膜。通过对其进行XRD、傅里叶红外吸收(FTIR)和光致发光谱(PL)的测量,研究了氧分压对PLD法制备的ZnO薄膜的结晶质量和发光性质的影响。XRD显示,氧分压为6.50Pa时可以得到结晶质量最佳的ZnO薄膜。PL谱显示,当氧分压由0.13Pa上升至6.50Pa时,位于380nm附近的主发光峰的强度最大。当氧分压进一步上升至13.00Pa时,主发光峰减弱,与氧空位有关的发光峰消失,显示出ZnO薄膜的PL谱和氧分压的大小密切相关。

ZnO thin films were deposited on n-type Si （111） substrates at various oxygen partial pressures by pulsed laser deposition （PLD） method. X-ray diffraction （XRD）, Fourier transform infrared spectrophotometer （FTIR） and photoluminescence （PL） were used to analyze the crystalline and luminescence properties of the ZnO thin films deposited at various oxygen partial pressures. XRD shows that an optimal crystallized ZnO thin film is obtained at the oxygen particl pressure of 6.50 Pa. PL shows that the main emission peak at 380 nm is the strongest when oxygen partial pressure inereases from 0.13 pa to 6.50 Pa. The main emission peak decreases and the emission peaks related to oxygen vacancies disappear as the oxygen partial pressure go up to 13.00 Pa. It is concluded that the PL spectra of ZnO thin films are related to the oxygen pressures nearly.