射频磁控溅射硅薄膜的制备与结构研究

Fabrication and structure research of silicon films prepared by RF magnetron sputtering

采用拉曼光谱、光学显微镜、透射电镜研究了不同衬底温度、腔体气压对射频磁控溅射法制备的不含氢硅薄膜相结构和形貌的影响。结果表明430℃时薄膜中出现微晶相,平均晶粒尺寸2.8nm。腔体内杂质及衬底表面的显微缺陷会诱发薄膜针孔、凹坑等缺陷的产生。低温、高压会导致薄膜中空洞缺陷的密集。

The effects of different substrate temperature, chamber pressure on the phase structure, morphology of undoped silicon films deposited by radiofrequency （RF） magnetron sputtering were examined by Raman spectrum, optical microscope and transmission electron microscope. The measurements suggested that the microcrystalline phase was observed at 430℃ ,with the mean crystalline size of 2. 8nm. The pinhole, pit defects of films can be induced by the impurities of the chamber and the surface micro-defects of the substrate. The dense distribution of the voids in the film resulted from low substrate temperature and high chamber pressure.