摘要
利用电子回旋共振CVD设备制备了一种硫系GeSbTe薄膜,并用纳米硬度计考察了其抗压性能,同时采用划痕实验以及摩擦力显微镜研究了GeSbTe薄膜的摩擦特性。结果表明:GeSb_2Te_4膜的微观抗载荷性能随着膜厚的增加而显著增强;对于90nm厚度的GeSb_2Te_4来说,施加1000μN左右的载荷所获得的硬度和弹性模量值受基体的影响较小,分别为2.07GPa、38.70GPa;湿度对Ge_2Sb_2Te_5膜和针尖粘附的影响没有GeSb_2Te_4明显,而且粘附力的存在会改变摩擦系数。
GeSbTe thin films are prepared with electron cyclotron resonance microwave plasma chemical vapor deposition equipment,and their anti-compression property is analyzed by nano-indenter, while the friction property of GeSbTe thin films is investigated by scratch test and Friction Force Microscope（FFM） as well. The results show that the anti-load property of different thick GeSb2 Te4 films increases with the increment of film thickness. The influence on the values of hardness and elastic modulus caused by the substrate is less significant when the applied load is around 1000μN,and the values of which are 2.07GPa and 38. 70GPa respectively. The effect on the adhesion between the tip and GeSb2Te4 film caused by the humidity is more significant than that between the tip and Ge2Sb2Te5 film, and the presence of adhesion can change the friction coefficient.
关键词
GeSbTe膜
抗压性能
摩擦性能
相变存储
GeSbTe film, anti-compression property, friction property, phase change storage
