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化学溶液沉积法制备涂层导体阻隔层用钨盐前驱体的制备和筛选

Preparation and Screening of Tungsten-based Precursors for Buffer Layers of Coated Conductors by Chemical Solution Deposition
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摘要 制备了[(n-C_4H_9)_4N]_2[W_6O_(19)]、过氧钨酸衍生物(APTA)和[(n-C_8H_(17))_2NH_2]_2[W_4O_(13)]3种有机钨盐,研究了这几种盐在不同溶剂中的溶解性、溶液的稳定性以及在钇稳定氧化锆(YSZ)基片上的润湿性。研究发现:[(n-C_8H_(17))_2NH_2]_2[W_4O_(13)]在丙酸中具有溶解性良好、溶液稳定性高及润湿性好的特点,而且与其它金属盐前驱体在丙酸中的配伍性好。因此,选择[(n-C_8H_(17))_2NH_2]_2[W_4O_(13)]作为钨盐的前驱体,使我们尝试用化学溶液沉积法制备涂层导体的钨基双钙钛矿薄膜阻隔层成为可能。 No efforts concerning the preparation of tungsten-based double-perovskite films has been devoted up to date. In this paper three tungstates, [(n-C4 H9 ) 4 N]2 [W6 O19 ], tungsten-based polyoxometallate complex(APTA) and [(n-C8 H17 )2 NH2 ]2 [W4O13 ], are prepared and their solubility and stability in common solvents as well as the wettability of the solutions on YSZ single crystal substance are investigated. The results show that in propionic acid [(n- C8 H17 )2 NH2 ]2 [W4 O13 ] has good solubility, high stability, satisfactory wettability on YSZ and good compatibility with other precursors. The tungstate [(n-C8 H17 )2 NH2 ]2 [W4O13 ] is therefore an ideal tungsten-based precursor and it is possible for us to prepare tungsten-based double perovskite buffer layers for coated conductor by chemical solution deposition.
出处 《材料导报(纳米与新材料专辑)》 EI 2008年第3期366-368,共3页
基金 国家863计划项目(2006AA03Z204)
关键词 涂层导体阻隔层 化学溶液沉积法 钨盐前驱体 制备 筛选 buffer layers of coated conductor, chemical solution deposition, tungsten-based precursor, preparation, screening
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