摘要
采用IBM公司刚刚推出试用的0.35μm SiGe BiCMOS开发性工艺5PAe设计并实现了一个C波段功率放大器。该放大器采用两级单端结构,除集电极扼流电感外,其余元件全部片上实现,具有集成度高、结构简单的特点。通过在管子基极和匹配电感中串联电阻实现了全频段稳定。键合测试表明,在所有电源电压下电路均能稳定工作。在VC=3.5V,VB=7V,f=4.1GHz时,小信号增益为17.7dB,输入输出反射系数分别为-16.9dB和-13.9dB,而在输出功率为22.8dBm时,二次和三次谐波分别小于-36dBc和-45dBc。
A C-band power amplifier realized in IBM 5PAe 0. 35-μm SiGe BiCMOS technology is reported. Since it was implemented in a two-stage single-ended structure with all components integrated on chip except choking inductors, it shows the advantages of high integration and simple structure. A full frequency stability was achieved by serial resistance between the bases of the transistors and matching inductors. The off-chip test proves the stability of the am- plifier under all the supplied voltages. At Vc=3.5 V, VB=7 V, f=4.1 GHz, the small signal gain was 17.7 dB. The second and third harmonic were less than -36 dBc and -45 dBc, respectively, when the output power was 22.8 dBm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2009年第1期46-49,共4页
Research & Progress of SSE
基金
863课题资助(2006AA03Z418)
关键词
功率放大器
锗硅
双极性互补金属氧化物半导体
异质结双极型晶体管
power amplifier
germanium silicon
bipolar complementary metai-oxide-semi-conductor
heterojunction bipolar transistor
