不同厚度ZnO薄膜取向和应力的研究

Research on the Orientation and Stress of ZnO Films with Different Thickness

采用直流磁控溅射技术制备了厚度为600-1600nm的ZnO薄膜，利用XRD对薄膜的相结构进行了分析，利用薄膜应力分析仪对薄膜的应力进行了分析。结果表明：所有的薄膜都沿（002）方向高度择优。随着薄膜厚度的增加，ZnO薄膜的晶体质量得到提高，各种缺陷逐渐减小；ZnO薄膜的内应力为压应力；随着厚度的增加，ZnO薄膜的平均应力逐渐减小，并且应力分布趋于均匀。

ZnO films with different thickness of 600- 1 600 nm were deposited by DC magnetron sputtering. The microstructure of the films was inspected by X-ray diffraction（XRD）. The residual Stress was measured using wafer stress distribution test instrument. Mierostructure analysis showed that the （002） was the preferential growth orientation for the films with different thickness. The crystalline quality of the ZnO films got better and defects decreased with the increase of the films thickness. Residual stress analysis showed that the stress was compressive. The mean stress decreased and the film stress distribution became more uniform with the increase of the films thickness.