线圈台阶对区熔硅单晶生长影响的数值计算分析

Numerical Analysis of Coil Step to Improve FZ Silicon Crystal Growth

悬浮区熔法是生长硅单晶的重要方法之一,线圈形状作为主要的工艺参数直接影响能量分布并最终决定硅单晶的生长情况。通过有限元法对区熔硅单晶生长进行数值模拟,考虑二维轴对称情况下由高频线圈产生的电磁场对熔区产生的影响,主要对比分析了线圈上方有无台阶对单晶生长的不同影响。同时结合相应的试验结果及现象,得到了线圈台阶的引入提高了晶体成晶的质量。

Floating zone （FZ） growth is one of the most important methods in Si crystal growth. As one main technique parameter, the shape of the coil is important to energy distributing in silicon, and it can finally determine the crystal growth progress. The finite element method is taken to the numerical simulation of silicon crystal growth. Loading high-frequency electromagnetic to coil in two-dimensional axial symmetry, we find the different influences on crystal growth with two different coils. Comparing the results with experimentation, we can get the step of the coil can improve the quality of crystal growth.