磁控溅射AlN介质的14W/mm AlGaN/GaN MIS-HEMT

14 W/mm AlGaN-GaN MIS-HEMTs with Magnetron Sputtered AlN Dielectric as Gate Insulator

介绍了一种采用磁控溅射AlN介质作为绝缘层的的SiC衬底AlGaN/GaN MIS-HEMT。器件研制中采用了凹槽栅和场板结构。采用MIS结构后,器件击穿电压由80V提高到了180V以上,保证了器件能够实现更高的工作电压。在2GHz、75V工作电压下,研制的200μm栅宽AlGaN/GaN MIS-HEMT输出功率密度达到了14.4W/mm,器件功率增益和功率附加效率分别为20.51dB和54.2%。

An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors （MIS- HEMTs） with magnetron sputtered AlN dielectric as gate insulator, manufactured on a semi-insulating SiC substrate is introduced in this paper. Gate recessing technique and field plate structure are both applied in this design. With the application of MIS configuration on a gate recessed AlGaN/GaN HEMT with field plate, breakdown voltage is raised from 80 V to over 180 V, leading to an improvement in operating voltage. At 2 GHz and 75 V operating voltage, the 200 μm gate width AlGaN/GaN MIS-HEMT thus designed demonstrates an output power density of 14.4 W/mm with 20.51 dB power gain and 54.2% power added efficiency （PAE）.