由静电放电脉冲应力产生的氧化层陷阱电荷

Oxide-Trapped Charges Induced by Electrostatic Discharge Impulse Stress

以传输线脉冲(TLP)为例,研究了由静电放电脉冲应力产生的氧化层陷阱电荷Qot+的特性。当氧化层厚度为3.2nm时,无论是直流还是TLP脉冲应力,其导致氧化层击穿的正氧化层陷阱电荷Qot+的质心变化和临界密度是相同的。当氧化层厚度为14nm时,在两种不同的应力下,Qot和质心的特性是不同的。TLP脉冲应力产生的负氧化层陷阱电荷的数量Qot-远小于直流应力产生的数量。热电子产生更有效的空穴陷阱以引发击穿。

The characteristics of oxide - trapped charges Qot^＋ induced by electrostatic discharge impulse stress,i, e. ,transmission line pulsing（TLP） ,were studied. It was observed that for a 3.2nm thin oxide, the centroid evolution and the critical density of positive oxide - trapped charges Qot ＋ to trigger oxide breakdown are about the same between dc and TLP impulse stresses. Different behaviors of Qot and centroid were found for 14nm - thick oxides subjected to different stress tests. TLP impulse stress generates far less amount of negative oxide - trapped charges Qot^- than dc stress. The hotter injected electrons generate more efficient hole trappings to provoke breakdown.