摘要
InGaAs/AlGaAs MQW superluminescent LED(SLED) is fabricated by using pulsed anodic oxidation and molecular beam epitaxy(MBE).The power and spectral output characteristics of three kinds of device structures are investigated.An output power above 10 mW with FWHM of 18 nm is demonstrated at a current of 150 mA.
InGaAs/AlGaAs MQW superluminescent LED （SLED） is fabricated by using pulsed anodic oxidation and molecular beam epitaxy （MBE）. The power and spectral output characteristics of three kinds of device structures are investigated. An output power above 10 mW with FWHM of 18 nm is demonstrated at a current of 150 mA.
基金
Sponsored by the National Nature Science Foundation of China(60474026,60477010)
