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太阳能电池背表面钝化的研究 被引量:2

Study on the rear surface passivation of solar cells
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摘要 利用PC1D模拟不同少子寿命的电池效率与背表面复合速率的关系,采用氮化硅和及其与二氧化硅薄膜的叠加层作为背面钝化膜,通过丝网印刷的方法形成条形局域背接触和局域背面点接触,条形接触的面积为背表面的25%,背面点接触孔径为250μm,间距2mm。经过RTP处理之后,两种不同的接触方式存在相同的问题,串联电阻大,并联电阻小,而利用腐蚀浆料的方法形成背面点接触,在电性能参数有少许改善。结果表明,在正常的烧结状态下,常规铝浆很难完全穿透氮化硅薄膜及其叠加层背面钝化层。而利用腐蚀浆料的方法形成背面点接触,在电性能参数有少许改善。 The relationship between the battery efficiency with different minority carrier life and the conversion efficiency on the backside surface different bulk life time silicon was simulated by using PCID. The SIN and SIN/SIO stacks were used as the dielectric rear passivation layers. The screen printing technology was used to form the grid back contact with the area of the rear surface 25% and point contact with diameter of 250um and space 2mm. There is the same problem in the two different forms. The series resistance is too big, and the shunt resistance is too small. By using acid method, the electric performance parameters become a little better. The results above indicate that it is difficult to go through the dielectric rear passivation layers by using the common AI paste ,while using acid method, the electric performance parameters become a little better.
出处 《能源工程》 2009年第1期17-20,共4页 Energy Engineering
关键词 背面钝化 背面局域接触 rear surface passivation local back contact
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参考文献5

  • 1BASORE P A. Extended spectral analysis of internal quantum effieiency [ C]. 23th Photovoltaic Spec. conference . New York, 1993.
  • 2MITTE M, METZ A, HEZEL R. Thin multicrystalline silicon solar cells with silicon nitride front and rear surface passivation [ C ]. Photovoltaic SpeciaLists Conference, Conference Record of the Twenty-Ninth IEEE. 2002.
  • 3REMIAT B, SAINT-CAST P, SOUCHE F, et al. Investigation of a new solar cell rear side process for thin silicon wafers [ C ]. 22^nd European Photovohaic solar cells Energy Conference ,2007.
  • 4STEFAN D. Loss mechanisms in silicon nitride rear surface passivation for silicon solar cells[ C]. The 17^th European photovoltaic solar energy conference and exhibition, 2001.
  • 5MARKUS R, DIETMAR B," Industrial rear sin-passiration on muhicrstalline silicon solar cells" [ C ]. the 2006 IEEE4^thWorld Conference on Photovoltaic Energy Conversion, 2006.

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