一种新型RF MEMS单刀双掷开关的设计与仿真

Design and Simulation of a Novel RF MEMS SP2T Switch

本文介绍了一种利用单驱动电压控制通路选择的新型RFMEMS单刀双掷开关,利用三维仿真软件Ansoft HFSS和ANSYS进行仿真和优化设计该开关的性能。仿真结果表明:驱动电压为22V,开关时间为22μs,在中心频率30GHz处,开关处于down状态下的插入损耗为0.42dB,回波损耗为43dB,隔离度为29dB;而当开关处于up状态的插入损耗为0.53dB,回波损耗为19dB,隔离度为28dB,该开关的性能仿真和优化设计达到理想情况。。

A novel path choice RF MEMS SP2T switch based on single actuation voltage is presented.Switch's performance is simulated and optimized by using Ansoft HFSS and ANSYS software.As software shows,the actuation voltage is V,the switching time is us,and the central frequency is 30GHz.When switchs are in up state,its insert loss is 0.42dB,return loss is 43dB,the isolation is 29dB;while in the down state,insert loss is 0.53dB,return loss is 19dB,and the isolation is 28dB,the performancs simulation and optimization design is perfectly achieved.