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太赫兹真空源斜注管高频结构研究 被引量:1

Analysis of Vacuum THz Source Clinotron Slow-Wave Structure
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摘要 斜注管的工作原理是将电子注稍微倾斜于慢波系统表面,通过改变电子注的倾角,来优化有效互作用长度,实现较高的输出功率和效率,可以作为一种新型高功率太赫兹器件。本文就国外的发展情况进行了评述。初步设计了W波段斜注管的几何尺寸和电尺寸,并对其"冷"特性进行了初步研究。 The working principle of the clinotron is slightly tilting the electron beam to the surface of the slow-wave system,optimizing the length of the effective interaction by varying the angle of the electron beam to obtain high output power and efficiency.The clinotron can be used as a new type of high power THz device.The development of the clinotron in foreign countries was reviewed in this paper.Moreover,we preliminary designed the physical dimension and the electrical size of the W-band clinotron,and also investigated its'cold'characteristic.
出处 《微波学报》 CSCD 北大核心 2010年第S1期551-553,共3页 Journal of Microwaves
关键词 斜注管 太赫兹 返波振荡器 真空器件 clinotron THz BWO Vacuum device
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  • 1冯进军.从真空微电子学到真空纳电子学[J].电子器件,2005,28(4):958-962. 被引量:5
  • 2冯进军,廖复疆,朱敏,闫铁昌.微型真空电子器件技术研究[J].真空电子技术,2005,18(6):8-16. 被引量:5
  • 3冯进军.集成真空电子学发展简述[C].2009年《真空电子技术》杂志编委会暨第三届理事会会议论文集,北京真空电子技术杂志社,2009:7.
  • 4朱敏,冯进军.太赫兹真空辐射源技术的发展[C].中国电子科技集团公司科技委基金项目总结报告,2005.
  • 5Korolev A N,Zaitsev S A.Traditional and Novel Vacuum Electron Devices[J].IEEE Transactions on Electron Devices,2001,48(12):2929.
  • 6Vye D,Pelletier L.The New Power Brokers:High Voltage RF Devices[J].Microwave Journal,2009,(6):22-40.
  • 7Carlo A D,Paoloni C.The European Project OPTHER for the Development of a THz Tube Amplifier[J].Proceeding of IVEC,2009:100.
  • 8李含雁,白国栋.体硅深槽刻蚀技术研究[C].中国电子学会真空电子学分会第十七届学术年会论文集(下),2009:751.
  • 9冯进军,蔡军,胡银富,等.W波段连续波行波管研究进展[C].中国电子学会真空电子学分会第十七届学术年会论文集(上),2009:5.
  • 10Li Ji,Wang Hui,Gao Yujuan,et al.Recent Progress in Scandaia-Doped Dispenser Cathode[C].IVEC,2006:51.

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  • 1冯进军,唐烨,李含雁,任大鹏,蔡军,胡银富,邬显平.短毫米波和太赫兹线性注真空器件研究[J].真空电子技术,2013,26(1):1-9. 被引量:8
  • 2冯进军,廖复疆,朱敏,闫铁昌.微型真空电子器件技术研究[J].真空电子技术,2005,18(6):8-16. 被引量:5
  • 3Shvets G.Applications of electromagnetic metamaterials to vacuum electronics devices and advanced accelerators[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2014:14466902.
  • 4Caloz C,Itoh T.Metamaterials for high-frequency electronics[J].Proceedings of the IEEE,2005,93(10):1744-1752.
  • 5Cai J,Feng J J,Wu X P,et al.Analysis and test preparation of attenuator for W-band FWG TWT[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2007:9855417.
  • 6Hu Y F,Feng J J.3D simulation of electron gun and beam transport for W-band TWT[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2007:9855438.
  • 7Hu Y F,Feng J J,Cai J,et al.A broadband microwave window for W-band TWT[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2008:376-377.
  • 8Feng J J,Cai J,Wu X P,et al.Design investigation of 10W W-band FWG TWT[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2007:9855428.
  • 9Hu Y F,Feng J J,Cai J,et al.Performance enhancement of W-band CW TWT[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2011:21-22.
  • 10Hu Y F,Feng J J,Cai J,et al.Development of W-band CW TWT amplifier[C]∥Proceedings of IEEE International Vacuum Electronics Conference.Piscataway,NJ:IEEE Press,2012:295-296.

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