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太赫兹量子阱光探测器电子输运特性的MC模拟

Monte Carlo Simulation of Electron Transport in Terahertz Semiconductor Quantum-well Photodetectors
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摘要 半导体器件的MC(蒙特卡罗)模拟是深入研究小尺寸器件的物理过程中必不可少的工具。设计了一种基于三能带近似模型的MC平台,用来研究太赫兹场作用下GaAs/Al0.03Ga0.97As量子阱光探测器内部电子的输运特性。在这个平台的基础上,很好地研究了太赫兹作用下量子阱光探测器在低温和低电场时的电子输运特性。 A Monte Carlo （MC） platform incorporated with three-subband approximation model was developed to investigate the detailed behavior of electron transport in terahertz （THz） GaAs/Al0. 03 Ga0. 97 As quantum well. Particularly, the simulation was suitable for the condition of low electric field and low temperature. On this platform, some interesting phenomena were observed, which indicated wide application of terahertz quantum-well detectors.
作者 徐琳 景为平 茅惠兵
机构地区 华东师范大学电子科学与技术系 南通大学江苏省专用集成电路设计重点实验室
出处 《微电子学》 CAS CSCD 北大核心 2009年第2期267-271,共5页 Microelectronics
基金 国家自然科学基金资助项目(60576059) 江苏省专用集成电路设计重点实验室开放课题(JSICK0401)
关键词 蒙特卡罗模拟 太赫兹器件 量子阱 探测器 Monte Carlo simulation Terahertz device Quantum-well Detector
分类号 TN431.2 [电子电信—微电子学与固体电子学]
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参考文献7

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二级参考文献14

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微电子学
2009年 第2期

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