单片集成微传感器中多层耐熔金属硅化物互连

Multilevel Silicide Interconnect in Monolithic Microsensors

在微传感器系统中,采用多层耐熔金属硅化物互连工艺,克服微传感器与IC芯片单片集成时,铝连线不能承受微传感器制造过程中要求的退火高温,而且此互连结构能在标准CMOS工艺线上加工,降低了制造成本.经流片验证,此互连结构具有台阶覆盖能力强、热稳定性好、电阻率较低、易于干法刻蚀等特点,能满足大规模IC多层互连线要求.由它构成的大规模数模混合集成电路,在退火条件分别为500°C5、h,600°C、30 min,650°C5、min的实验后仍保持性能.以上退火条件符合基于铁电薄膜的微传感器系统单片集成的要求.

A novel local and global interconnect technique employing silicide in fabrication of monolithic microsensors was presented.Compatible with standard CMOS fabrication process,this interconnect process can resist high-temperature in the post process of the monolithic integration of microsensor and IC.With this new interconnect process utilized in standard CMOS procedures,thermal budget dilemma often encountered in the case of backend processing temperature of monolithic integration can be addressed.This interconnect system possesses the characteristics of higher temperature resistance than aluminum,higher step coverage,better thermal stability,better adhesion,compatibility with CMOS process,easy dry etching and lower resistance,so it can satisfy the requirements of multi-level interconnects of VLSI.The circuit samples can work after being annealed at 500 °C for 5 hours,600 °C for 30 minutes,and 650 °C for 5 minutes,respectively,which meets the requirements of monolithic integration of microsensor and IC.