氢化物气相外延氮化镓衬底的制备研究

Research on Qreparation for GaN Substrates by Hydride Vapor Phase Epitaxy

目前异质外延技术能够得到较高质量的氮化镓(GaN)薄膜,衬底普遍采用蓝宝石、碳化硅以及硅等。各种技术包括缓冲层、外延横向生长技术、悬挂外延技术等是目前最重要的制备氮化镓技术。氢化物气相外延(HVPE)是制备氮化镓衬底最有希望的方法之一。本文介绍了氮化镓材料的电学、光学性质及重要用途,总结了氮化镓体单晶及薄膜材料制备方法,描述了氢化物气相外延原理,分析了HVPE制备自支撑(FS)GaN衬底方法,综述了HVPE技术国内外研究进展。

Recently good quality epilayers of GaN have been grown heteroepitaxially on different substrates including sapphire SiC and silicon etc.Various growth techniques including buffer layers,epitaxial lateral overgrowth and pendeo-epitaxial overgrowth are the most important and effective techniques.Hydride Vapor Phase Epitaxy is a promising growth method for obtaining a GaN substrate.The aim of this paper is to review the electrical,optical properties of GaN and its important use.The methods of the preparation of GaN material are summarized.We also have described the theory of HVPE and analyzed the approach to prepare the Free-Standing GaN substrates by HVPE.Emphasis is placed on recent developments both domestic and abroad.