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Ferroelectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by sol-gel method 被引量:4

Ferroelectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by sol-gel method
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摘要 The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us-ing X-ray diffraction and atomic force microscopy. The thin films showed a perov- skite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700℃ were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1×1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively. The Bi3.25La0.75Ti3O12 thin films were fabricated on the Pt/Ti/SiO2/Si substrates using sol-gel method. The structure and morphology of the films were characterized us-ing X-ray diffraction and atomic force microscopy. The thin films showed a perov- skite phase and dense microstructure. The 2Pr and 2Vc of the Bi3.25La0.75Ti3O12 thin films annealed at 700℃ were 18.6 μC/cm2 and 4.1 V, respectively, under an applied voltage 10 V. After the switching of 1×1010 cycles, the Pr value decreased to 90% of its pre-fatigue values. The films showed good insulating behavior according to the test of leakage current. The dielectric constant and the dissipation factor of the Bi3.25La0.75Ti3O12 thin films were about 176 and 0.046 at 1 kHz, respectively.
出处 《Science China(Technological Sciences)》 SCIE EI CAS 2007年第1期1-6,共6页 中国科学(技术科学英文版)
基金 the Natural Science Foundation of Hubei Province (Grant Nos. 2003ABA061, 2004ABA082)
关键词 Bi3.25La0.75Ti3O12 THIN film SOL-GEL method FERROELECTRIC properties FATIGUE LEAKAGE current Bi3.25La0.75Ti3O12 thin film, sol-gel method, ferroelectric properties, fatigue, leakage current
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  • 1Guo Dongyun PhD,Wang Yunbo,Yu Jun,Gao Junxiong.Effect of annealing on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by the sol-gel method[J]. Journal of Wuhan University of Technology - Mater. Sci. Ed. . 2005 (4)
  • 2Lee J K,Kim C H,Suh H S, et al.Correlation between internal stress and ferroelectric fatigue in Bi4–xLaxTi3O12 thin films. Applied Physics Letters . 2002
  • 3Yoon S M,Lee N Y,Ryu S O, et al.Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi, La)4Ti3O12 fhin films. Thin Solid films . 2005
  • 4Angus K.Memories are made of ···. Nature . 1999
  • 5Scott J F,Zhu J S.Ferroelectric Memories. . 2004
  • 6Scott J F,,Araujo C A.Ferroelectric memories. Science . 1989
  • 7Park B H,Kang B S,Bu S D, et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature . 1999
  • 8Chu M W,Ganne M,Caldes M T, et al.X-ray photoemission spectroscopy characterization of the electrode-ferroelectric interfaces in Pt/Bi4Ti3O12/Pt and Pt/Bi3.25La0.75Ti3O12/Pt capacitors: Possible influence of defect structure on fatigue proper- ties. Physical Review B Condensed Matter and Materials Physics . 2003
  • 9Dimos D,Shareef H N Al,Warren W L, et al.Photoinduced changes in the fatigue behavior of SrBi2Ta2O9 and Pb(Zr,Ti)O3 thin films. Journal of Applied Physics . 1996
  • 10Shareef H N Al,Dimos D,Boyle T J, et al.Qualitative model for the fatigue-free behavior of SrBi2Ta2O9. Applied Physics Letters . 1996

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