新型1200V SPT^+芯片技术和17mm的IGBT功率模块平台——最先进逆变器设计的理想组合

New 1200V SPT^+ Chip Technology and 17mm IGBT Power Module Platform——The Ideal Combination for State-of-the-Art Inverter Design

在具有重要意义的1200V电压等级的市场上,SEMIKRON推出了17mm厚的扁平化的、采用SEMiX功率模块封装技术的下一代软穿通(SPT)IGBT,即SPT+作为今后开发其它产品的平台。和以前的软穿通芯片模块相比,SPT+模块的开关损耗和导通损耗都要低。芯片的自钳位模式及其极富创新的SEMiX封装使得客户可以容易地设计出成本低、结构紧凑的逆变器。本文介绍了SPT+的电气性能测试结果,并和以前的SPT芯片进行了比较。

SEMIKRON introduces the next generation of the Soft-Punch-Through IGBT, the SPT+, in it's flat 17mm SEMiX power module packages as a future platform for the important 1200V market. The new modules show lower switching as well as conduction losses in comparison with the previous SPT chip generation. A self clamping mode of the chip in combination with innovative SEMiX package allow for an easy, cost effective and compact inverter design. This article shows results of tests on the electrical behaviour and comparisons with the previous chip generation.