具有可控基区底面空穴注入的新型二极管结构

A Novel Diode Structure with Controlled Injection of Backside Holes(CIBH)

本文提出了一种3.3kV可控基区底面空穴注入的新型二极管结构,简称CIBH(ControlledInjectionofBacksideHoles)二极管。新二极管结构的特点是在阴极侧埋入浮置p层。这些p掺杂区在nn+结形成强电场,避免在nn+结产生雪崩。与无p层相同结构的二极管相比,CIBH二极管显著改善了动态皮实性以及小电流密度下的软反向恢复特性。仿真和首次试制结果显示这一新二极管概念是可以实现的。

In this paper we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn+ junction and accordingly avoid the avalanche generation at the nn+ junction. The CIBH diode concept provides, compared to diodes without p layers and the same design, significantly improved dynamic ruggedness and improved soft reverse recovery at low current densities. Simulations and results of the first fabricated diodes show the realizability of this new promising diode concept.