摘要
We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si-O films prepared in the oxygen-argon flow ratio VO2/Vtotal【1.0%, magnetic field Bappl≤1.0 T regime, indicating that not only the distribution of plasma but also the angular distribution of sputtered atoms are influenced by a high magnetic fleld. In the oxygen-argon flow ratio VO3/Vtotal】2.0%, magnetic field Bappl≥2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si-O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition.
We have investigated the effects of high magnetic fields on the microstructures and magnetic properties of Fe-Si-O films deposited by RF sputtering. Three typical sample appearances, hole-in-center, phase-separation and hybridization were obtained for the Fe-Si-O films prepared in the oxygen-argon flow ratioV O2/V total<1.0%, magnetic fieldB appl?1.0 T regime, indicating that not only the distribution of plasma but also the angular distribution of sputtered atoms are influenced by a high magnetic field. In the oxygen-argon flow ratioV O2/V total>2.0%, magnetic fieldB appl?2.0 T regime, strong (110) orientation of Fe3O4 grains and larger remanence and coercivity measured in the direction normal to the film plane appeared in the Fe-Si-O films. This result indicates that the high magnetic fields not only orient the Fe-Si-O film but also induce remarkable perpendicular magnetic anisotropy during the deposition.
基金
the Key TeacherSupporting Project of the National Education Committee (Grant No. G0032), and performed in the High Field Center for Superconducing Materials, IMR, Tohoku University, Sendai, Japan.
